Mohamed A. Osman

Present Position
Associate Professor School of Electrical Engineering and Computer Science

Research

1. high temperature electronics: reliability and parameter extraction, SPICE model development, transport in wide band gap semiconductors.
2. Ultrafast optical and electronic processes investigation: carrier-carrier interaction, dynmaic screening and coherent phenomena using Monte Carlo simulation.
3. Submicron device and process simulation, field emission devices, SOI devices.
4. Thermal Properties of Carbon nanotubes using molecular dynamics simulations.

Recent Publications
A.A. Osman, M.A. Osman, N.S. Dogan, and M.A. Imam, "Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation," IEEE Journal of Solid State Circuits , Vol. 30, 108-11, February 1995.

A.A. Osman, M.A. Osman, N.S. Dogan, and M. Imam, "Zero Temperature Coefficient Bias Points of Partially-Depleted SOI MOSFETS," IEEE Trans. Electron Devices, Vol. 42, Sept. 1995.

N. Nintunze and M.A. Osman, "Hole Drift Velocity in Warped Band Model of GaAs," Semiconductor Science & Technology , Vol. 10, 11-17 (1995).

R. Rodrigues, M. Sailor, P. Buchberger, R.A. Hopfel, N. Nintunze, and M.A. Osman, "Ultrafast energy loss of electrons in p-GaAs," Applied Physics Letters, Vol. 67, (July 1995).

M.A. Imam, M.A. Osman, and A.A. Osman, "MOSFET Global Modeling for Deep Submicron Devices with a Modified BSIM1 Spice Model," IEEE Trans. Computer Aided Design, vol. 15, pp. 446-451, 1996.

P.D. Pedrow, K. Goyal, R. Mahalingam, and M.A. Osman, "Explosion model applied to an intense pulsed plasma source for thin film deposition," IEEE Trans. on Plasma Science, vol. 25, pp. 89-96, 1997.

M.A. Imam, M.A. Osman, and A.A. Osman, "Threshold Voltage Model for deep-Submicron Fully Depleted SOI MOSFETs with Back gate Substrate Induced Surface Potential Effects," Journal of Microelectronics Reliability, vol.39 , pp. 487-495 , 1999.

M.A. Imam, H. Fu, M.A. Osman, and A.A. Osman,"A simple method to determine the floating body voltage of SOI CMOS devices," IEEE Electron Dev. Lett., vol. 21, 2000

M.A. Imam, H. Fu, M.A. Osman, and A.A. Osman, "Determination and assessment of the floating body voltage of SOI CMOS devices," IEEE Trans. Electron Dev. (in review).

L.V. Shepsis, P.D. Pedrow, R. Mahalingham, and M.A. Osman, "Effect of Monomer Pressure on the Deposition Rate of Plasma Polymerized Acetylene," IEEE Trans. On Plasma Science (in review).

M.A. Osman and D. Srivastava, "Temperature Dependence of the Thermal Conductivity of Carbon Nanotubes," Applied Physics Letters (in review).

L.V. Shepsis, P.D. Pedrow, R. Mahalingham, and M.A. Osman, "Modeling and Experimental Comparison of Pulsed Plasma Deposition of Aniline," Thin Solid Films (in review).